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(Bi2-xZnx)(Ti2-xNbx)O7陶瓷的结构与介电性能

Structure and Dielectric Properties of (Bi2-xZnx)(Ti2-xNbx)O7 Ceramics

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【作者】 高春浩杨同青郑琼娜姚熹

【Author】 GAO Chun-hao,YANG Tong-qing,ZHENG Qiong-na,YAO Xi(Functional Materials Research Laboratory,Tongji University,Shanghai 200092,China)

【机构】 同济大学功能材料研究所

【摘要】 研究了(Bi2-xZnx)(Ti2-xNbx)O7(0.4≤x≤1.0)陶瓷材料的结构与介电性能。X-射线衍射结果表明,该组分体系在950~1 100℃烧结,可得到单相立方焦绿石结构陶瓷。扫描电子显微镜观察样品形貌发现,x越大,晶粒尺寸越大。室温介电性能的测试表明,在1 MHz条件下,随x值的增大,介电常数从218下降到122,损耗为(1~4)×10-4。介电温谱测试发现,该组分体系在低温下出现明显的介电弛豫峰,峰形随x增大逐渐宽化。微波特性的测试表明,在谐振频率2~3 GHz,样品的品质因数与谐振频率之积Q×f为112~158 GHz。

【Abstract】 The structure and dielectric properties of(Bi2-xZnx)(Ti2-xNbx)O7(0.4≤x≤1.0) ceramics were investigated.All samples sintered at 950~1 100 ℃ exhibit a single cubic pyrochlore structure according to X-ray diffraction analysis.Scanning electron microscope micrographs indicate that the grain size increases with the increase of x value.The dielectric properties tests at room temperature show that the dielectric constant at 1 MHz decreases from 218 to 122 with the increase of x value and the dielectric loss remains in the level of(1~4)×10-4.Dielectric temperature spectra reveal that all compositions show a typical dielectric relaxation behavior and the dielectric peak flattens with the increase of x value.The product of quality factor and frequency(Q×f) is in the range of 112~158 GHz at the resonant frequency of 2~3 GHz by microwave characteristic tests.

【基金】 国家重点基础研究发展计划基金资助项目(2002CB613302)
  • 【文献出处】 压电与声光 ,Piezoelectrics & Acoustooptics , 编辑部邮箱 ,2009年04期
  • 【分类号】TM28
  • 【下载频次】145
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