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ZnO-TiO2复合半导体的制备与光催化性能
Preparation of ZnO-TiO2 Coupled Semiconductor and Photocatalytic Activity
【摘要】 采用溶胶-凝胶法制备了掺杂Zn2+的TiO2复合半导体,用X射线衍射和拉曼光谱对其微晶结构进行表征,并掺杂不同金属离子对复合半导体进行调变。以活性艳红K-2BP为模型降解物,在固定催化剂投加量、通气量和pH的条件下,考察了Zn2+与Ce4+、La3+、Fe3+掺杂量对ZnO-TiO2光催化活性的影响。结果表明,Zn2+掺杂使TiO2衍射峰宽化、蓝移且峰强减弱,晶粒径减小。当Zn2+掺杂量为20.0%时,对活性艳红30 min的降解率为97%,表观反应速率常数k值达到了0.133 min-1,为TiO2的1.4倍。La3+、Fe3+、Ce4+掺杂可提高ZT的活性,其中,当La3+掺杂量为0.5%时,k值为ZT的1.4倍。
【Abstract】 The Zn2+-doped TiO2 coupled semiconductor was prepared by Sol-Gel method and its microcrystal structure was characterized by X-Ray diffraction and Raman spectroscopy.On this basis,coupled semiconductor was adjusted through doping with different metal ions.With the reactive brilliant red K-2BP as the simulacrunm,the effect of Zn2+ and Ce4+,La3+,Fe3+doping amounts on photocatalytic activity of ZnO-TiO2 was studied under the fixed photocatalyst amount,air flow rate and pH value.The results show that,Zn2+-doping can cause the diffraction peaks of TiO2 widening,blue shift,the diffraction intensity weakened and the grain size decreased.The reactive red K-2BP can be degradated to 97% within 30min when Zn2+ doping content is 20.0%.The apparent rate constant reaches 0.133min-1 which is 1.4 times to TiO2.La3+,Fe3+ and Ce4+ doped can further enhance ZT photocatalytic activity.Among them,the value is 1.4 times to ZT when La3+ doping content is 0.5%.
【Key words】 Zinc oxide; titania; coupled semiconductor; photocatalytic activity; reactive red;
- 【文献出处】 西安理工大学学报 ,Journal of Xi’an University of Technology , 编辑部邮箱 ,2009年01期
- 【分类号】O643.36
- 【被引频次】23
- 【下载频次】565