【摘要】 采用磁控溅射的方法制备了Co/FeMn/Co多层膜,研究了Co(底部)/FeMn和FeMn/Co(顶部)界面插入Pt层后磁矩的变化情况.通过测量磁滞回线可知,Co(底部)/FeMn界面的Pt插层改变了体系的饱和磁化强度Ms,随着Co层厚度(tCo)的增加Ms不断趋近于Co块体结构理论值1440kA/m.这是因为Co(底部)/FeMn界面产生了净磁矩,而界面处的Pt插层可以减少这种净磁矩的产生.但是,FeMn/Co(顶部)界面却表现出了与Co(底部)/FeMn界面不同的性质,其界面的Pt插层对磁矩影响很小.更多还原

【Abstract】 Co/FeMn/Co multilayers were prepared by magnetron sputtering. The change of magnetic moments by insertion of Pt spacer at the Co (bottom)/FeMn interface and FeMn/Co (top) interface has been investigated. According to the hysteresis loops measured by alternating gradient magnetometer (AGM), the saturation magnetization (M_s) of multilayers is changed by the Pt spacer at the Co (bottom)/FeMn interface, and there is an asymptotic approach of M_s to the theoretical value of M_s of the cobalt bulk of 1440 kA/m as the thickness of Co layer (t_Co) is increased. This behavior is due to the production of net magnetic moments at the Co (bottom)/FeMn interface, which are decreased by Pt spacer at the Co (bottom)/FeMn interface. However, a significant difference between the Co (bottom)/FeMn interface and the FeMn/Co (top) interface is observed, as little influence of the Pt spacer on magnetic moments is shown when inserted at the FeMn/Co (top) interface.更多还原