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穿透型V形坑对GaN基p-i-n结构紫外探测器反向漏电的影响

Influence of penetrating V-pits on leakage current of GaN based p-i-n UV detector

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【作者】 张爽赵德刚刘宗顺朱建军张书明王玉田段俐宏刘文宝江德生杨辉

【Author】 Zhang Shuang Zhao De-Gang Liu Zong-Shun Zhu Jian-Jun Zhang Shu-Ming Wang Yu-Tian Duan Li-Hong Liu Wen-Bao Jiang De-Sheng Yang Hui (State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China)

【机构】 中国科学院半导体研究所集成光电子国家重点联合实验室

【摘要】 研究了GaN基p-i-n(p-AlGaN/i-GaN/n-GaN)结构紫外探测器的漏电机理.实验发现,在位错密度几乎相同的情况下,基于表面有较高密度的V形坑缺陷材料制备的器件表现出较高的反向漏电.进一步的SEM测试发现,这种V形坑穿透到有源区i-GaN、甚至n-GaN层.在制备p-AlGaN电极时,许多金属会落在V形坑中,从而与i-GaN形成了肖特基接触,有些甚至直接和n-GaN形成欧姆接触.正是由于并联的肖特基接触和欧姆接触的存在导致了漏电的增加.

【Abstract】 The leakage mechanism of GaN-based p-i-n (p-AlGaN/i-GaN/n-GaN) UV detector has been investigated. With the same dislocation density, devices made from material with higher density of V-pits on surface produce larger leakage current. SEM images show that some V-pits penetrate into i-GaN layer, sometimes even the n-GaN layer. If p-ohmic contact metal (Ni/Au) deposits in the V-pits, Schottky contact would be formed at the interface of metal and i-GaN, or form ohmic contact at the interface of metal and n-GaN. The existence of parallel Schottky junction and ohmic contact resistance enhances the leakage current greatly.

【关键词】 GaN紫外探测器V形坑反向漏电
【Key words】 GaNUV detectorV-pitsleakage current
【基金】 国家自然科学基金(批准号:60776047;60506001;60476021;60576003;60836003)资助的课题~~
  • 【文献出处】 物理学报 ,Acta Physica Sinica , 编辑部邮箱 ,2009年11期
  • 【分类号】TN23
  • 【被引频次】7
  • 【下载频次】187
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