【摘要】 研究了1 MeV和1.8 MeV电子辐照下GaInP/GaAs/Ge三结太阳电池的辐照损伤效应.电学性能研究结果表明,GaInP/GaAs/Ge三结太阳电池的开路电压、短路电流和最大功率随辐照剂量的增加发生明显衰降,在1 MeV电子辐照下剂量为1×1015cm-2时,与辐照前相比最大功率衰降了17.7%.暗I-V特性分析表明,高能电子辐照下三结电池串、并联电阻的变化是引起太阳电池电学性能衰降的重要原因.光谱响应分析结果表明,GaInP/GaAs/Ge三结太阳电池电学性能发生明显衰降的主要原因是其GaAs子电池的严重损伤造成的,而GaAs子电池的损伤主要表现为基区底部光生载流子收集效率的明显衰降.提高GaInP/GaAs/Ge三结太阳电池抗辐照能力的关键在于尽可能地减小GaAs子电池的基区损伤.更多还原

【Abstract】 Radiation damages of 1 Mev and 1.8 Mev electrons to the triple-junction GaInP/GaAs/Ge solar cell are investigated.The results indicate that electric properties of the GaInP/GaAs/Ge triple-junction solar cell,such as open-circuit voltage,short-circuit current and maximum power,decrease obviously as the irradiation fluence increases.Under the irradiation fluence of 1×10¹⁵cm^-2 of 1 MeV electrons,the maximum power output is degraded by 17.7%.Under higher energy electron irradiation,the dark I-V characteristic shows that the changes in both the series and parallel connection resistance of the triple-junction cell are reasons causing the degradational of electrical properties.By the analysis of spectral response,the degradation in electric properties is primarily duc to the severe damage of the GaAs sub-cell.The damage of the sub-cell is associated closely with the obvious decrease in the collecting efficiency of light-generated carriers in the bottom of the base-zone.The key to improve the radiation resistance of the triple-junction GaInP/GaAs/Ge solar cell is to reduce the damage of the base-zone of GaAs sub-cell as much as possible.更多还原