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单晶铜纳米线屈服机理的原子模拟研究

Atomistic simulation of yield mechanism of single crystal copper nanowires

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【作者】 徐振海袁林单德彬郭斌

【Author】 Xu Zhen-Hai Yuan Lin Shan De-Bin Guo Bin (School of Materials Science and Engineering,Harbin Institute of Technology,Harbin 150001,China)

【机构】 哈尔滨工业大学材料科学与工程学院

【摘要】 采用分子静力学方法模拟了〈100〉单晶铜纳米线的拉伸变形过程,研究了纳米线屈服的机理.结果表明:1)纳米线初始屈服通过部分位错随机激活的{111}〈112〉孪生实现,后继屈服通过{111}〈112〉部分位错滑移实现;2)纳米线变形初期不同滑移面上的部分位错在两面交线处相遇形成压杆位错,变形后期部分位错在刚性边界处塞积,两者都阻碍位错滑移,引起一定的强化作用.

【Abstract】 Molecular statics simulation was used to study the yielding mechanism of 〈100〉 oriented single crystal copper nanowires under tension.The results show that,the yield of nanowires is initially realised via {111}〈112〉 twinning from random activation of partials,and subsequently via slip of {111}〈112〉 partial dislocation;in addition,the partial dislocations on different planes successively slip and meet to form stair-rod dislocation at the initial stage of plastic deformation,while some partial dislocations are piled up near the rigid boundary at the later stage of plastic deformation,both of which hinder dislocation slip,resulting in strengthening of the single crystal copper nanowires.

【关键词】 纳米线屈服位错分子静力学
【Key words】 nanowireyielddislocationmolecular statics
【基金】 国家自然科学基金(批准号:50705020);黑龙江省杰出青年科学基金(批准号:JC-06-07);哈尔滨工业大学科研创新基金(批准号:2008.33)资助的课题~~
  • 【文献出处】 物理学报 ,Acta Physica Sinica , 编辑部邮箱 ,2009年07期
  • 【分类号】TB383.1
  • 【被引频次】4
  • 【下载频次】248
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