【摘要】 采用化学气相沉积(CVD)的方法在砷化镓基底上合成直径为20nm左右、长约数十微米的氧化锌纳米线,然后采用热扩散的方法,将生长于砷化镓基底之上的氧化锌纳米线通过600℃,30min的有氧退火处理后,获得了砷掺杂的氧化锌纳米线.将获得的掺杂后的氧化锌纳米线采用电子束曝光以及真空溅射镀膜的方法将钛/金合金作为接触电极引出,从而构建成场效应晶体管.文中研究了单根氧化锌纳米线砷掺杂前后的电学特性,证实了通过砷掺杂来获得p型的氧化锌纳米线的可行性.构建的p型砷掺杂氧化锌场效应晶体管的跨导为35nA/V,载流子浓度为1.4×1018cm-3,迁移率为6.0cm2/V.s.测得单根砷掺杂氧化锌纳米线的光致发光谱:源于氧化锌近带边激子复合所产生的位于383nm处的近紫外光尖峰,由缺陷能级辐射所产生的位于580nm附近的黄绿光带以及掺杂所形成的AsZn-2VZn浅受主能级所引出的红光波段.这些电学及光学特性的研究将为获得基于单根氧化锌纳米线同质结的电致发光器件及逻辑器件的构建奠定基础.更多还原

【Abstract】 ZnO nanowires with the average diameter of 20 nm and the length of longer than 10 μm were synthesized on GaAs substrate by chemical vapor deposition（CVD）.As-doped ZnO nanowires were obtained by annealing the samples at 600 ℃ for 30 min in oxygen.Single ZnO nanowire field effect transistors（FET）were fabricated by electron beam exposure and magnetron sputtering deposition and Ti/Au deposited as ohmic-contact electrodes.Based on the electrical properties of the single ZnO nanowire FET before and after annealing,we verified that p-type ZnO nanowire can be obtained by As doping effectively.The parameters of the single As doped ZnO nanowire FET were as follows:the transconductance was 35 nA/V,the hole density was 1.4×1018 cm₃,and the mobility was 6.0 cm2/V·s.We also obtained the photoluminescence spectrum of single As-doped ZnO nanowire:strong ultraviolet light at 383 nm,weaker yellow-green light,and red light due to the existence of As-Zn-2V-Zn shallow acceptors.更多还原