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半金属锑薄膜中电子动力学研究

The electron dynamics of semimetal Sb films

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【作者】 陈宇辉王阳左方圆赖天树吴谊群

【Author】 Chen Yu-Hui1)Wang Yang2)Zuo Fang-Yuan1)Lai Tian-Shu1) Wu Yi-Qun2)1)(State Key Laboratory of Optoelectronic Materials and Technology,Department of Physics Sun Yet-Sen University,Guangzhou 510275,China)2)(Key Laboratory of Material Science and Technology for High Power Lasers,Shanghai Institute of Optics and Fine Mechanics,Chinese Academy of Sciences,Shanghai 201800,China)

【机构】 中山大学物理科学与工程技术学院,光电材料与技术国家重点实验室中国科学院上海光学精密机械研究所,中国科学院强激光材料科学与技术重点实验室

【摘要】 采用时间分辨抽运-探测透射光谱,研究了不同波长和不同激发流密度下半金属Sb薄膜的超快电子动力学过程.透射变化率的时间延迟扫描曲线显示在延迟零点附近出现强的振荡,正的吸收饱和峰在亚皮秒时间内衰减为负的吸收增强峰.之后,负的吸收增强峰在数皮秒时间内甚至再次演变为吸收饱和.正饱和峰和负吸收峰幅度正比于激发流密度和光波长.对这些现象进行了分析,引入"缺陷"态模型及考虑"缺陷"态对光激发电子的快速俘获和逐渐释放,能够合理、半定量地解释实验观察到的所有现象.

【Abstract】 The time resolved pump-probe spectroscopy was used to study the ultrafast carrier dynamics of semimetal Sb films at different wavelengths and pump fluences.The profiles of differential transmission versus delayed time showed sharp oscillation near the zero-time-delayed point.A positive absorption saturation peak turned into a negative absorption peak in subpicosecond time.Then the latter began to attenuate and again showed absorption saturation eventually in several picoseconds.The amplitudes of the positive and negative peaks were proportional to the pump fluence and wavelength.These phenomena are analyzed in this article and explained reasonably and semi-quantitatively by introducing the "defect model" and considering fast capture and release by "defect states" of hot electrons.

【基金】 科技部重大科学研究计划(批准号:2007CB935402);国家自然科学基金(批准号:60490290,60678009,10874247,50872139,50502036);中山大学物理学基地项目(批准号:J0630320和J0730313)资助的课题~~
  • 【文献出处】 物理学报 ,Acta Physica Sinica , 编辑部邮箱 ,2009年05期
  • 【分类号】O484
  • 【被引频次】1
  • 【下载频次】117
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