【摘要】 本文提出了一种低电压、高线性度CMOS射频混频器。在LC折叠式共源共栅结构中,通过并联一工作在弱反应区的辅助MOS管的方法来改善线性度。在1V的工作电压下,采用TSMC0.18μm射频CMOS工艺仿真表明,该方法在基本不影响混频器其它参数如增益、功耗、噪声的条件下IIP3提高了6dB。更多还原

【Abstract】 A CMOS radio frequency mixer with high linearity and low operation voltage is presented.Base on LC folded-cascoded structure,an auxiliary MOSFET in the sub-threshold region is used to improve the linearity.Simulation carried with TSMC0.18μm RF CMOS technology at 1v voltage shows IIP3 improvement as much as 6dB without sacrificing other features such as gain 、dissipa-tion and noise.更多还原