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受主掺杂对BaSnO3电阻的电学性能影响
Effects of Acceptor on the Electrical Properties in BaSnO3 Electronic Materials
【摘要】 测试BaSnO3电阻样品的复阻抗、损耗电学性能,通过对实验结果的分析得知,通过受主Na2CO3及Mn(NO3)2复合掺杂能够有效增加该材料的晶界电阻.同时得出随着Mn(NO3)2掺杂量的增大,材料的电阻增大,且当掺杂量为1.0 mol%时,材料的电阻率为3.3×106Ω.cm;而其介电系数与损耗则随着Mn(NO3)2掺杂量的增加而减小,在1 kHz下的介电系数为1.9×104,损耗为0.34.
【Abstract】 The study showed that Na2CO3 and Mn(NO3)2 complex dope could increase the grain-boundary resistance of the materials,and the resistance of the material increases with increase of the doping mount by the test and analysis of the complex impedance and the loss of the wafer BaSnO3 samples.The resistance of the samples is 3.3×106 Ω·cm when doped with the concentration of 1.0 mol% of Mn(NO3)2,but the apparent dielectric constant and loss of the samples became lower with increase of the doping mount.And now,on the condition of 1 kHz of frequency,the apparent dielectric constant of the samples was 1.9×104,the loss was 0.34.
【Key words】 acceptor doping BaSnO3； ceramics； electronic properties； doped with Mn(NO3)2；
- 【文献出处】 山西师范大学学报(自然科学版) ,Journal of Shanxi Normal University(Natural Science Edition) , 编辑部邮箱 ,2009年02期
- 【分类号】TM54
- 【被引频次】1
- 【下载频次】237