【摘要】 研究了用十甲基环五硅氧烷和三氟甲烷电子回旋共振等离子体沉积的掺F SiCOH低k薄膜中,CHF3/DMCPS比对薄膜结构、成分、介电性能、热稳定性和憎水性的影响.结果表明,随着CHF3/DMCPS比的增大,沉积的薄膜从SiCOH向F-SiCOH和a-C:F:H转变.对于F-SiCOH薄膜,在获得较低介电常数的前提下,薄膜热稳定性和憎水性得到改善更多还原

【Abstract】 SiCOH film were deposited by decamethylcyclopentasiloxane(DMCPS) and trifluromethane(CHF3) electron cyclotron resonance plasma at CHF3/DMCPS flow ratio of 0 to 0.60.Effect of CHF3/DMCPS flow ratio on structure,composition,dielectric constant,thermal stability and hydrophobic property of F doped SiCOH films are investigated.A structural evolution of the films from SiCOH to F-SiCOH,and then to a-C:F:H take place with the increase in CHF3/DMCPS flow ratio.For the F-SiCOH films,the thermal stability and hydrophobic property can be improved at the premise of meeting the lower dielectric constant.更多还原