【摘要】 采用近空间升华法(CSS)制备CdTe多晶薄膜,模拟制备过程中的温场变化,结合I-V、C-V特性及深能级瞬态谱研究温场均匀性对CdS/CdTe太阳电池性能的影响。结果表明,温场分布和薄膜厚度分布基本一致,温场均匀性对电池组件的开路电压影响不大,对短路电流和填充因子有影响,CdTe薄膜的深中心对温度和频率的响应基本一致。580℃制备的样品暗饱和电流密度最小,载流子浓度较高,光电特性较好,而且空穴陷阱浓度较低,深中心复合作用较小。通过改进温场的均匀性能够制备出组件转换效率为8.2%的CdS/CdTe太阳电池。更多还原

【Abstract】 The transformation of preparation temperature field of large area CdTe films was simulated,and the effect of temperature field’s uniformity on CdS/CdTe solar cells was investigated by the characteration of I-V、C-V and Deep Level Transient Spectroscopy(DLTS).The result showed that the uniformity of temperature field has effect on Isc and FF,but lacks impact on Voc.Least dark saturated current density、more higher carrier concentration and better photovoltaic performance were observed in the sample prepared at 580 ℃;The response of deep-level impurities in CdTe films is consistent with temperature and frequency,but the sample(580 ℃) has less deep-level impurities’ recombination because of lower hole trap concentration.8.2% efficiency of the CdS/CdTe solar cells was reached by improved the uniformity of temperature field.更多还原