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Ga掺杂⁷⁰Ge纳米晶的制备与研究

Preparation and study of gallium-doped ⁷⁰Ge nanocrystals

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【作者】游草风；卢铁城；胡又文；陈青云；敦少博；胡强；范立伟；张松宝；唐彬；代君龙；

【Author】 YOU Cao-Feng~1 , LU Tie-Cheng~(1,2), HU You-Wen~1 , CHEN Qing-Yun~1, DUN Shao-Bo~1,HU Qiang~1 , FAN Li-Wei~1, ZHANG Song-Bao~3 , TANG Bin~3, DAI Jun-Long~3(1. Department of Physics, Key Laboratory for Radiation Physics and Technology of Ministry of Education,Sichuan University, Chengdu 610064, China;2. International Center for Material Physics, Chinese Academy of Sciences,Shenyang 110015, China;3. Institute of Nuclear Physics and Chemistry, China Academy of Engineering Physics,Mianyang 621900, China)

【机构】四川大学物理系教育部辐射物理及技术重点实验室；中国科学院国际材料物理研究中心；中国工程物理研究院核物理与化学研究所；

【摘要】通过离子注入及中子嬗变掺杂制备了Ga（镓）掺杂⁷⁰Ge（锗）纳米晶,并对样品进行了质子激发X射线荧光分析谱（PIXE）、光致发光谱（PL）、激光拉曼散射谱（LRS）的测量与研究。结果表明:随着Ga杂质浓度的增加,580 nm附近的荧光峰的发光强度不断地下降,这可能是非辐射的俄歇复合过程与纳米晶数量的减少共同作用的结果。此外,从PL上面看到580nm附近的荧光峰蓝移则可能是由纳米晶尺寸的减小和非辐射的俄歇复合过程引起的。更多还原

【Abstract】 Gallium-doped ⁷⁰Ge nanocrystals were prepared by ⁷⁰Ge ions implantation and neutron transmutation doping. Then, the samples were studied by PIXE,PL and Raman spectra. It is concluded that the non-radiative Auger recombination process and the amount reduce of the nanocrystals probably lead to the decrease in relative intensity of the peak around 580 nm. With the increase of Ga-acceptors concentration, the high-energy shift of the peak around 580 nm may be attributed to decrease of the nanocrystals size and the non-radiative Auger recombination process.更多还原