【摘要】 以无机纳米颗粒ZnO作为电子传输材料,并以不同质量比掺杂到PVK∶Ir(ppy)3体系作为发光层制成一系列磷光器件,器件结构为:ITO/PVK∶Ir(ppy)3∶ZnO(100∶1∶x)/BCP/Alq3/Al,ZnO的掺杂浓度x分别为0%,1%,2%,5%,10%,研究了它们的电致发光特性。结果表明:合适比例ZnO掺杂可以改善器件的发光特性,ZnO的最佳掺杂量为1%,此时器件的相对发光强度是未掺杂的器件的4倍,器件的启亮电压也由未掺杂时的15.5V降到了10.5V。当掺杂浓度较大时,电子传输过多在电极另一侧形成漏电流,没有在发光层内进行电子与空穴有效复合,没有对发光起到作用,导致器件的发光性能下降。更多还原

【Abstract】 Different ratio of ZnO, a good electron-transporting inorganic material, doped with the PVK:Ir(ppy)3 system as emitting layer. The structure of the devices used was ITO/PVK∶Ir(ppy)3∶ZnO(100∶1∶x)/BCP/Alq3/Al. The doping weight ratio of ZnO was 0%,1%,2%,5%, 10%. The luminescence properties of the devices were investigated. An appropriate concentration of ZnO doping in the PVK∶Ir(ppy)3 system can improve the luminescence properties of polymer light-emitting diodes. The best doping level of ZnO was 1 %, at which the luminescence intensity of the device was 4 times that of the undoped device, and the threshold voltage was decreased from 15.5 V to 10.5 V. The brightness of the devices decreases when the doping ratio of ZnO too large to 10%.The reason is that superabundant electrons get to the opposite electrode as sink current, which are not recombination with the holes in the emitting layer, useless to luminesce.更多还原