【摘要】 运用电感耦合等离子体原子发射光谱仪(ICP-AES)分析了比较了水热法ZnO晶体+c及c-部分的杂质,用四探针法比较了两部分的电阻率。结果表明,晶体+c部分杂质含量少于-c部分,且前者电阻率明显高于后者。比较了Xe灯激发下两部分的光学性质,用氧气和氢气分别对+c部分ZnO进行处理,并进一步用He-Cd激光器对晶体的光学性能进行了研究,分析表明ZnO晶体416 nm左右的蓝光发射来自导带到锌空位(VZn)浅受主能级的跃迁,490 nm的蓝绿光发射与锌填隙(Zni)有关,540 nm附近的黄绿光发射与氧填隙(Oi)形成的能级有关。更多还原

【Abstract】 Impurities and resistivity have been compared for +c part and-c part of ZnO single crystal grown by hydrothermal method.The results indicate that-c part has more impurities and higher conductivity.ZnO crystals are annealed under oxygen-rich environment and hydrogen-rich environment.The optical properties are investigated under Xe lamp and He-Cd laser.Results show that the blue emission of 416 nm is related to the electron transition from zinc vacancy(VZn) to valence band,490 nm emission is related to zinc interstitials(Zni).The green emission around 540 nm is related to oxygen interstitials(Oi).更多还原