【摘要】 采用模型固体理论,在计入晶格失配造成的应变效应的情况下,计算了In1-xGaxAsyP1-y/InGaAsP单量子阱中电子和空穴的能带.结果表明:通过调整混晶组分,可以方便地调制能带结构,实现能带转型;当阱由单层变为多层时,通过控制组分可使势阱由方阱变为抛物阱.更多还原

【Abstract】 The band profiles in InGaAsP single quantum well are investigated using the model solid theory under considering of the effect of strain.The band lineups for electrons and holes are tuned by changing Ga concentration x and As concentration y in the well on condition that the concentrations in the barrier are fixed.The results indicate that the variety of concentration influences evidently the band lineups,resulting in type-Ⅰ to type-Ⅱ transformation.When the well is multilayer,parabolic potential well can expediently carry out by controlling the compositions.更多还原