【摘要】 通过对PJFET与双极兼容工艺技术的研究,解决了PJFET和双极兼容工艺中的技术难点,得到了IDSS=150~350μA(W/L=10∶1)、VP=0.8~1.2 V、IGSS=10-12~10-11A的高性能PJFET和β=100~250、BVCEO≥36 V、Va≥100 V的NPN管。采用该技术,成功研制出一种偏置电流小于100 pA的高精密双极结型场效应晶体管(BJFET)集成运算放大器,获得了良好的效果。更多还原

【Abstract】 An investigation was made on PJFET-bipolar compatible process technology,and solutions to technical problems associated with the compatible process were found.Using this process,high-performance PJFET with IDSS = 150-350 μA(W/L = 10∶1),VP = 0.8-1.2 V,and IGSS= 10-12-10-11 A,and NPN transistor with β =100-250,BVCEO ≥ 36 V,and Va ≥ 100 V were realized.And based on bipolar junction field effect transistor(BJFET),a high-precision integrated operational amplifier with bias current below 100 pA was developed.更多还原