【摘要】 半导体制造工艺成品率对空间差异越来越敏感,需要表征与优化工艺空间均匀性。利用两步试验设计方法,针对六输入变量的热氧化工艺,仅需31次试验,便建立了表征工艺目标和空间均匀性响应曲面模型。利用该模型优化工艺,得到了满足其他工艺指标下工艺空间均匀性最优的工艺设置。片间非均匀性从1.44%减小到0.77%,片内非均匀性从0.2%减小到0.12%。更多还原

【Abstract】 Semiconductor manufacturing process yield becomes more and more sensitive to spatial difference,so characterizing and optimizing the process spatial uniformity is needed.With two-step experimental design method,only 31 experiments were designed for thermal oxidization process of six input factors.Response surface models of film thickness and process spatial uniformity were constructed through experiment.The optimum process sets of uniformity that meet other process goals were obtained using the model.The wafer-to-wafer non-uniformity of film was reduced from 1.44% to 0.77%,and within-wafer non-uniformity of film was reduced from 0.2% to 0.12%.更多还原