【摘要】 采用K型可磨热电偶对氮化硅陶瓷高效深磨的温度进行了测量,讨论高效深磨中不同磨削参数对磨削区温度和能量分配的影响。研究结果显示,氮化硅陶瓷高效深磨中,磨削区温度通常在200～300℃之间,磨削能量分配系数在2%～5%之间。这表明大部分热量被磨屑和冷却液带走,避免了磨削区的高温。磨削区温度与弧区的平均热流密度有着较好的线性关系,即热流密度越高对应的磨削区温度越高。当砂轮线速度或磨削深度高于临界值时,磨削弧区的温度先逐渐升高到约250℃,然后急剧上升至接近干磨时的温度。更多还原

【Abstract】 The grinding temperature in the wheel-workpiece contact zone in the high efficiency deep grinding (HEDG) of silicon nitride is measured by using a grindable K type thermocouple. The effects of grinding parameters on the grinding temperature and on the energy partition are investigated. The results indicate that in the HEDG of silicon nitride, the grinding zone temperature is generally between 200 and 300 ℃, and the partition coefficient of grinding energy is between 2% and 5%, which means most heat is carried away by grinding chips and coolant, thereby avoiding the high temperature in grinding zone. The grinding zone temperature exhibits a sound linear relationship with the average heat flux, i.e. the higher the heat flux, the higher the corresponding grinding zone temperature will be. However, when the wheel linear velocity or the grinding depth exceeds the critical value, the grinding zone temperature will first rise gradually to 250 ℃, then rapidly rise to nearby the temperature of dry grinding.更多还原