【摘要】 通过比较短路电流的方法,标定了探测器对He-Ne激光的响应度。用Nd∶YAG激光辐照PIN光电探测器,通过测量激光辐照后探测器对He-Ne激光的短路电流,获得了探测器响应度变化与辐照激光功率密度的关系。从实验数据可知,探测器被功率密度低于7.6×105W/cm2的Nd∶YAG激光辐照后,不会发生损伤,激光辐照后,探测器对He-Ne激光的响应度不发生改变;当Nd∶YAG激光的功率密度超过9.6×105W/cm2时,激光辐照后,探测器对He-Ne激光辐照的响应度开始下降,PN结遭到破坏是探测器响应度下降的根本原因,扫描电镜的结果与我们的分析相一致。更多还原

【Abstract】 Responsibility is an important factor reflecting the performance of photoelectric detector and an important basis judging whether the detector was laser-induced damaged.In this paper,compared with the short-circuit current of the standard detector,the responsibility of the detector used in the experiment was calibrated.After the PIN detector was irradiated by Nd∶YAG laser,according to the change of short-circuit current,the relationship between the responsibility of detector and the power density of incident laser was obtained.The detector irradiated by laser is fit when the power density of Nd∶YAG laser is lower than 7.6 × 105 W/cm2,the responsibility of the detector was constant for He-Ne laser.When the power density of laser is more than 9.6×105 W/cm2,with increasing incident laser power density,the responsibility of the detector was reduced slowly.And the reason for the fall of responsibility was analyzed.Our conclusion was confirmed by scanning electron microscope photographs(SEM).更多还原