节点文献
基于标准CMOS工艺的一款宽带限幅放大器芯片设计
A Wideband Limiting Amplifier design of Basing on CMOS Technics
【摘要】 采用SMIC0.35μmCMOS混合信号工艺来设计开发一款适用于SDHSTM-16的光接收机前端限幅放大器芯片。该限幅放大器的设计采用了电容中和技术来实现带宽的扩展,可满足2.5Gbps速率要求,芯片电路拥有信号丢失检测和自动静噪功能。芯片版图的参数提取仿真表明:芯片最小输入动态范围可达2mV,50Ω负载上的双端输出摆幅约为1400mVpp,在3.3V供电下静态功耗仅为66mW,动态功耗为105mW,有实际推广价值。
【Abstract】 A 2.5Gbps limiting amplifier was realized in SMIC 0.35μm CMOS mixed signal process for optical receiver’s front end. This limiting amplifier uses capacitance neutralization technology to improve bandwidth and can satisfy 2.5 Gbps requirement for SDH STM-16 system. The chip also includes detecting lost signals and automatic squelch module. The post-simulation results show that this chip offers an input dynamic range as small as 2 mV,and provides a constant double-end output of 1.4 Vpp over a 50 Ω load. The static power dissipation is only 66 mW and dynamic power dissipation is 105 mW with the supply voltage of 3.3 V.
【Key words】 limiting amplifier; capacitance neutralization; CMOS technology;
- 【文献出处】 中国集成电路 ,China Integrated Circuit , 编辑部邮箱 ,2009年01期
- 【分类号】TN722;TN402
- 【被引频次】1
- 【下载频次】280