【摘要】 利用陶瓷烧结基本理论以及高压烧结的特点对高压下ZnO晶粒快速生长的现象进行了分析,并结合拉曼光谱对高压下得到的ZnO晶体进行了研究。结果表明:ZnO在高压下烧结时,其晶粒生长速率大大提高,在900℃时约为常压下晶粒生长速率的960倍;高压下ZnO晶粒快速生长的原因可能是由于高压下ZnO中间隙锌离子浓度大大增加所致;通过Raman光谱分析表明高压下生长得到ZnO晶体质量随着温度的升高而有所提高。更多还原

【Abstract】 The phenomenon of the rapid growth of ZnO single crystal was analysed by using the basic theory of ceramic sintering and the characteristics of high-pressure sintering.At the same time,the obtained ZnO single crystal was studied by combining with Raman spectrum.The results showed the growth rate of ZnO was greatly increased by high-pressure sintering process,it was nearly 960 times to that under the atmospheric pressure at(900 ℃.) The reason of which was probably caused by the great increase of zinc ion concentration in the gap under the high pressure.Analysed by Raman spectrum,the quality of crystal which was obtained under high pressure was improved with increasing temperature.更多还原