【摘要】 本文推导了一种可简便、准确、直观计算和分析pn结Ⅰ-Ⅴ特性的公式和方法,并应用该方法对两类典型HgCdTe环孔pn结的Ⅰ-Ⅴ、R_D-V特性进行了计算和拟合;得到了表面欧姆(反型沟道)漏电导、二极管理想因子n随电压的分布等反映二极管结特性的重要参数。计算结果表明,对于长波HgCdTe光伏器件而言,表面漏电流在整个暗电流中所占的比重相当大,表面漏电流严重地制约着器件性能。HgCdTe材料的晶体缺陷会使二极管的理想因子n增大,从而使产生-复合电流及陷阱辅助隧穿电流增加。更多还原

【Abstract】 In this paper,a simple,accurate and intuitionistic formula and method for calculating and analyzing theⅠ-Ⅴcharacteristics of a pn junction is deduced.The method is used to calculate and analyze theⅠ-Ⅴand R_D-V characteristics of two typical HgCdTe loophole junctions.Some important parameters which reflect the characteristics of a diode,such as surface Ohm leakage conductance and the distribution of the ideal factor n with voltage are obtained.The calculation result shows that for a long wavelength HgCdTe photovoltaic device,the surface leakage current accounts for a significantly large amount of the total dark current and imposes a severe restriction on the performance of the device. Due to the crystal defect in HgCdTe material,the ideal factor n of the diode can be increased and hence both the generation-recombination current and the trap-assisted tunneling current can be increased.更多还原