【摘要】 文章针对光电耦合器在空间辐射应用中的位移损伤效应,选取了一种典型的光电耦合器4N25进行了1MeV高能电子辐照试验,获得了辐照后器件电流传输比参数(CTR)的退化与电子注量的关系:在试验注量范围(1.3×1012~1.5×1013cm-2)内,nCTR与电子通量成反比。通过位移损伤对器件及材料作用过程的分析,探讨了光电耦合器位移损伤效应作用机理。更多还原

【Abstract】 To study the radiation displacement damage of optocouplers, 4N25 is selected to be exposed under 1 MeV electron radiation. It is shown that the device’s parameter degradation is inversely proportional to the electron fluence. The mechanism of displacement damage of materials and devices, especially of the optocouplers, is discussed.更多还原