【摘要】 实验研究了匹配状态、放电气压对氩气射频感性耦合等离子体中受迫振荡的影响。结果表明:受迫振荡总是出现在放电的正反馈区;在高气压下(>30Pa)受迫振荡的频率较低。对于使用射频感性耦合等离子体进行薄膜沉积的参数选择给予了理论指导。更多还原

【Abstract】 A low-frequency oscillation-driven oscillation in ICP by Ar discharging is found near mode transition.The oscillation’s region and cause are studied in the experiment,and the influence of pressure is also measured.It is found that driven oscillation occurs in the positive feedback region which is established basing on the influencing of stray capacitor in impedance matching work to the output power of radio-frequency power supply.As the changing of pressure,at high pressure(>30Pa) the frequency of driven oscillation is small.The steady parameters of depositing film in ICP are discussed in theory.更多还原