【摘要】 采用高温高压手段,在压力3.5 GPa、温度900 K的条件下,成功合成出La填充型方钴矿热电材料LaxCo4Sb12(0<x≤1.0),系统地研究了样品的晶体结构和电输运性能随填充分数x的变化关系。研究结果表明:在最大填充分数x为0~1.0的范围内,随着La填充分数的增加,样品的晶胞常数稍有增大,晶体结构仍为典型的方钴矿结构,没有La杂质相出现。室温下样品的电输运性能测试结果表明:La填充型方钴矿为p型半导体;样品的电阻率和Seebeck系数随La含量的增加均呈现出先增加后逐渐降低的趋势;当填充分数x为0.3时,样品的Seebeck系数和电阻率均达到了最大值;功率因子在x=0.5时达到了最大值。更多还原

【Abstract】 La-filled skutterudite compounds LaxCo4Sb12(0<x≤1.0)were successfully synthesized at 3.5 GPa and 900 K.The X-ray diffraction results indicate that all synthesized samples exist as a single phase with a crystal structure of CoSb3.The composition-dependent electric transport properties of La-filled CoSb3 have been studied at room temperature.The lattice parameters of the samples increase gradually with the increasing of La content.No La phase is found in the range of x from 0.1 to 1.0.The La-filled skutterudite is p type semiconductor.The electrical resistivity and Seebeck coefficient increase firstly with the increasing of La content and then decrease.When the La content x is 0.3,the electrical resistivity and Seebeck coefficient both reach the maximum value.The maximum power factor is obtained when the La content x is 0.5.更多还原