【摘要】 掺入摩尔分数为1%In2O3和0.5%Er2O3,从n(Li)/n(Nb)比为0.94,1.05,1.20,1.38的熔体中用提拉法生长In:Er:LiNbO3(In:Er:LN)晶体。测试了晶体的紫外–可见吸收光谱、荧光光谱和抗光损伤阈值。结果表明:随着n(Li)/n(Nb)增加,晶体吸收边发生紫移,晶体的荧光发光强度和晶体抗光损伤阈值增强。n(Li)/n(Nb)为1.38的近化学计量比晶体的荧光发光强度和抗光损伤阈值最高。对不同n(Li)/n(Nb)的晶体的吸收边移动和抗光损伤阈值和荧光发光强度增强的机理进行讨论。更多还原

【Abstract】 A series of In:Er:LiNbO3 (In:Er:LN) crystals doped with 1% (in mole, the same below) In2O3 and 0.5% Er2O3 were grown by the Czochralski method from the melt with various n(Li)/n(Nb) mole ratios (0.94, 1.05, 1.20 and 1.38). The ultraviolet–visible absorption spectra, fluorescence spectra and optical damage resistance threshold of In:Er:LN crystals were measured. The results show that with the increase of the n(Li)/n(Nb), the absorption edge of the In:Er:LN crystals shifts to the violet, and its fluorescent luminescence intensity and the optical damage resistance threshold increase. The fluorescent luminescence intensity and the optical damage resistance threshold of the near-stoichiometric In:Er:LN crystal with an n(Li)/n(Nb) of 1.38 are the highest. The mechanisms of the absorption edges shift and the fluorescent luminescence intensity and the optical damage resistance threshold of the crystals are discussed.更多还原