【摘要】 氧化锌(ZnO)是一种极其重要的半导体材料,具有宽带隙(3.37eV)和高激子结合能(60meV),适合制作短波长发光二极管和激光二极管。综述了体块ZnO单晶的主要生长方法:化学气相输运法、水热法、助溶剂法的原理和优缺点;着重探讨了水热法和助溶剂法的生长参数及所生长ZnO单晶的特征;结合KOH+H2O体系,论述了助熔剂法的反应机理。介绍了体块ZnO单晶中存在的缺陷及其对ZnO性质的影响。更多还原

【Abstract】 Zinc oxide(ZnO) is an exceptionally important semiconductor material.Due to the wide band gap energy(3.37eV) and large exciton-binding energy(60 meV),it is suitable for making short-wavelength light-emitting diodes and laser diodes.Bulk ZnO single crystal growth methods,including chemical vapor transport,the hydrothermal process and the flux method,are summarized.The principles as well as the advantages and disadvantages of these methods are reviewed.The growth parameters and characteristics of ZnO single crystals grown by the hydrothermal and flux methods are discussed in particular.The growth process and formation mechanism of ZnO crystal in KOH+H2O molten solution is described in detail.The growth defects and their influence on ZnO properties are also discussed.更多还原