【摘要】 利用霍尔离子源辅助电子束蒸发方法,分别在反应烧结碳化硅(RB-SiC)和常压烧结碳化硅(Sintered SiC,S-SiC)基底材料上制备了Si改性膜层,并进行了相关性能测试和分析。经过表面改性,两种基底的表面粗糙度(rms)大幅地降低,镀银后的反射率有较大地提高,基底表面光学质量已满足工程应用要求。在相同工艺条件下,S-SiC基底改性后效果好于RB-SiC基底的情况,主要是因为Si膜在两种基底表面生长情况不同所致。更多还原

【Abstract】 Silicon coatings are prepared on mirrors of RB-SiC and S-SiC substrate for surface modification by means of e-beam evaporation,using End-Hall source for ion assisted deposition(IAD).Correlated performance of the silicon coatings is tested and analyzed.The roughness(rms)of the two kinds of substrate is reduced greatly and the reflectivity coated with Ag film is improved simultaneously after surface-modification.Surface qualities of the SiC mirror are obviously improved and the requirement of application is attained.Under the same technical conditions,the modified effect of S-SiC is better than that of RB-SiC.It is because of the different growing characteristic of Si film on the two kinds of substrate.更多还原