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ITO靶材黑化物的X射线光电子能谱研究

Investigation on the Blackened Matter on ITO Target Using XPS

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【作者】 刘黎明杨培志莫镜辉

【Author】 LIU Li-ming~1 YANG Pei-zhi~(1,2) MO Jing-hui~1 (1 Kunming Institute of Physics,Kunming 650223,China; 2 Key Laboratory of Advanced Renewable Energy Materials and Fabrication Technology of Education Ministry, Yunnan Normal University,Kunming 650092,China)

【机构】 昆明物理研究所云南师范大学可再生能源材料先进技术与制备教育部重点实验室

【摘要】 利用X射线光电子能谱(XPS)分析了ITO靶材黑化物的化学组成,结果表明黑化物由In、Sn、O和C组成,相对原子百分含量In为34.35%,Sn为2.74%,O为52.65%,C为10.26%;In、Sn处于亚氧化状态;C有部分氧化。与原始靶材相比,黑化物的元素组成和化学状态发生了明显的变化。择优溅射最可能引起成分比例失常,真空残余的含C气体和泵油蒸汽被认为是污染C的直接来源。

【Abstract】 The blackened matter produced on the surface of indium tin oxide(ITO) target is investigated employing X-ray photoelectron spectroscopy(XPS) technology in this paper.The results show that the blackened matter contains four elements, namely In,Sn,O and C.For In,Sn,O and C,the atom percents are 34.35%,2.74%,52.65%and 10.26%,respectively. It is obvious that the elemental composition and their contents of the blackened matter are very different from that of the raw ITO target.In and Sn are in suboxide chemical state,and contaminating carbon is oxidized partly.As a result, the performance of ITO films yielded with such target is abnormal.The contaminating carbon comes from the residual gas containing carbon in working vacuum or the oil steam in vacuum pump.Selective sputtering of ion beam is regarded as the original reason for the content alteration of In,Sn and O.

  • 【文献出处】 光学与光电技术 ,Optics & Optoelectronic Technology , 编辑部邮箱 ,2009年05期
  • 【分类号】TB383.2
  • 【被引频次】10
  • 【下载频次】67
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