【摘要】 利用X射线荧光分析方法,采用电制冷Sic(PIN)探测器,对配制的Ti-V,Ti-Fe,V-Fe三种伪二元体系样品进行测量,得到了元素计数率归一系数(RK)与含量(WK)之间的关系曲线,对各组元素间的吸收-增强效应程度进行了定性分析。结果表明,Ti-V二元系中所表现的吸收增强效应较明显,Ti-Fe,V-Fe两种二元系中吸收增强现象不明显。同时,采用指数拟合的数学校正方法,对RK-WK关系曲线进行了拟合,从而获得元素X射线荧光计数率与含量的函数方程。利用三组Ti-V二元系样品对此方法进行检验,与实际结果相比,对Ti,V元素的相对分析误差均在0.2%以内。更多还原

【Abstract】 The absorption and enhancement effects in X-ray fluorescence analysis for Ti,V and Fe elements were studied in the present paper. Three bogus duality systems of Ti-V/Ti-Fe/V-Fe samples were confected and measured by X-ray fluorescence analysis technique using HPGe semiconductor detector,and the relation curve between unitary coefficient (RK) of element count rate and element content (WK) were obtained after the experiment. Having analyzed the degree of absorption and enhancement effect between every two elements,the authors get the result,and that is the absorption and enhancement effect between Ti and V is relatively distinctness,while it’s not so distinctness in Ti-Fe and V-Fe. After that,a mathematics correction method of exponential fitting was used to fit the RK-WK curve and get a function equation of X-ray fluorescence count rate and content. Three groups of Ti-V duality samples were used to test the fitting method and the relative errors of Ti and V were less than 0.2% as compared to the actual results.更多还原