【摘要】 降低SiO2/SiC界面态密度是SiCMOS器件研究中的关键技术问题。采用氮等离子体处理SiO2/SiC界面,制作MOS电容后通过I-V、C-V测试进行氧化膜可靠性及界面特性评价,获得的氧化膜击穿场强约为9.96MV/cm,SiO2/SiC势垒高度2.70eV,同时在费米能级附近SiO2/SiC的界面态密度低减至2.27×1012cm-2eV。实验结果表明,氮等离子体处理SiO2/SiC界面后能有效降低界面态密度,改善MOS界面特性。更多还原

【Abstract】 Interface traps passivation at the SiO2/4H-SiC(0001)interface utilizing nitrogen plasma has been evaluated by current-voltage and capacitance-voltage measurements.The breakdown field strength of 9.96 MV/cm,barrier height of 2.7 eV,and density of interface traps of 2.27×1012cm-2eV-1 near the Fermi level were obtained,which indicated that nitrogen plasma process could dramatically reduce the density of interface traps at the SiO2/SiC interface and improve the properties of SiC-based metal-oxide-semiconductor capacitors.更多还原