【摘要】 本文研究了自分离硅微通道(self lift-off silicon microchannels)的氧化问题。自分离是在特定的实验条件下,在完成电化学刻蚀后,硅微通道可以自动和衬底分离的一种新技术。研究发现,在使用传统的干氧-湿氧-干氧氧化化过程中,硅微通道出现了弯曲变形的现象。微通道越薄,其形变越大。通过使用较厚的硅微通道以及在干-湿-干氧化过程之前增加了干氧,以及先进行激光切割的步骤,改善和基本消除了弯曲变形的现象。更多还原

【Abstract】 The oxidation of the self lift-off silicon microchannels is studied. Self lift-off silicon microchannels are fabricated by a new technology: under certain experimental conditions, the silicon microchannels can lift off from the substrate automatically after electrochemical etching. In the process of the traditional dry-wet-dry oxidation, damages and distortion of the silicon microchannels occurred. It was found that the thinner the silicon microchannels, the more serious the distortion and damages are. By using thicker silicon microchannels and adding a procedure of dry oxidation before the dry-wet-dry oxidation, the damages and distortion of the silicon microchannels can be eliminated.更多还原