【摘要】 本文对多发射极条(指)微波功率GeSiHBT进行了设计、制造和测试,并就测试结果对电流处理能力进行了研究。实验结果表明,对20~80指的GeSiHBT,发射极单位长度的电流密度I0在1.67~1.06A/cm之间变化。随发射极条数的增加,I0逐渐减少,分析认为这是由发射极条之间的热耦合引起有源区的温度非均匀分布而导致的。并且通过测试所得到的I0值,证明多指GeSiHBT可通过选择合适的发射极条数、条长和发射区面积获得更高的电流处理能力。更多还原

【Abstract】 Multi-finger microwave power GeSi HBT were designed and fabricated.The current handling capability was studied through testing the emitter current densities.Experimental results show that the emitter current linear density of unit perimeter(I0)varies from 1.67 to 1.06 A/cm for GeSi HBT with 20 to 80 emitter fingers.As the emitter fingers increasing,I0 reduces which result from non-uniform temperatures profile on emitters led by thermal coupling among emitter-fingers.The results benchmarks the GeSi HBT could obtain larger current handling capability by choosing the reasonable emitter fingers,length and area of emitter stripe.更多还原