【摘要】 利用电子回旋共振-等离子体增强金属有机物化学气相沉积(ECR-PEMOCVD)技术,在蓝宝石(α-Al2O3)衬底上生长出Mn含量约为3%的(Ga,Mn)稀磁半导体薄膜。利用反射高能衍射(RHEED)、原子力显微镜(AFM)和X射线衍射(XRD)表征(Ga,Mn)N薄膜的表面形貌和结构特征。(Ga,Mn)N薄膜具有良好的(0002)择优取向和纤锌矿结构,表面形貌是由许多亚微米量级的晶粒按一致的取向规则堆砌而成。光致发光(PL)测量发现3.27eV附近出现施主-受主对(DAP)发光峰。超导量子干涉仪(SQUID)测量表明薄膜在室温下具有铁磁性,没有发现超顺磁性和自旋玻璃态,居里温度可达400K。更多还原

【Abstract】 Diluted magnetic semiconductor film(Ga,Mn)N with Mn concentration up to 3% was grown on sapphire(α-Al2O3) substrate by electron cyclotron resonance-plasma enhanced metal organic chemical vapor deposition(ECR-PEMOCVD).The crystal structure and surface topography of the(Ga,Mn)N films were characterized by reflection high-energy electron diffraction(RHEED),X-ray diffraction(XRD) and atomic force microscope(AFM).(Ga,Mn)N films exhibit good(0002) preferred orientation and retain good wurtzite structure,no second phase was detected.The surface topography of(Ga,Mn)N film is composed of many submicron grains piled in the consistent orientation.A peak about donor-acceptor pair is found at 3.27eV by photoluminescence(PL).SQUID test result shows that the films exhibit ferromagnetic at room temperature,no superparamagnetic or spin glass is detected,the Curie temperature of the film is about 400K.更多还原