【摘要】 利用三维器件模拟软件,研究了深亚微米三栅FinFET的短沟道效应,并模拟了阈值电压和亚阈值摆幅随硅鳍(fin)厚度和高度的变化情况。通过优化硅鳍厚度或高度,可以有效的控制短沟道效应。在进一步对深亚微米三栅FinFET的拐角效应进行二维数值模拟的过程中,并未观察到由拐角效应引起的泄漏电流。与传统的体硅CMOS结构有所不同,拐角效应并未使得深亚微米三栅FinFET性能变差,反而提高了其电学性能。更多还原

【Abstract】 Short-channel effects of deep sub-micron triple-gate FinFET were investigated by using 3-D device simulation software.The silicon fin’s size dependence of threshold voltage and subthreshold swing were simulated and calculated.Short-channel effects could be effectively controlled by optimizing either silicon fin thickness or its height.The corner effects in deep sub-micron triple-gate FinFET were studied via 2-D numerical simulation.The calculated results showed that the corner effects didn’t induce leakage current.In contrast to traditional bulk silicon CMOS transistors,the corner effects do not deteriorate the properties of deep sub-micron triple-gate FinFET,instead it improve the electric performance of this device.更多还原