【摘要】 用直接键合技术在480℃实现了InP/GaAs的异质键合,用X射线光电子谱研究了样品的界面化学态。研究分析表明,InP/GaAs样品在480℃的键合过程中发生相互扩散(除P外),键合界面处形成了由InP、GaAsI、nAs和GaP构成的中间过渡层,过渡层厚度约为6nm。更多还原

【Abstract】 The bonded InP/GaAs wafers prepared by direct wafer bonding at 480℃ have been investigated by X-ray photoelectron spectroscopy.The experimental results indicate that InP and GaAs diffused into each other except phosphorus,and an interlayer composed of InP,GaAs,InAs and GaP exists between GaAs and InP wafers.更多还原