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用KMnO4处理ITO表面制备高效有机电致发光器件

Using oxidants to treat the ITO-coated glass surface to improve the OLEDs performances

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【作者】 王静王广德史红田兆硕孙玉德

【Author】 WANG Jing1, WANG Guang-de2, SHI Hong2, TIAN Zhao-shuo1, SUN Yu-de1(1.Information Optoelectronics Research Institute Harbin Institute of technology at WeiHai,264209,People′s Republic of China; 2.Electronic Information and Engineering Department ,Jilin Normal University,Siping 136000,People′s Republic of China)

【机构】 哈尔滨工业大学(威海)信息光电子研究所吉林师范大学信息技术学院

【摘要】 用氧化剂KMnO4溶液处理ITO表面制备了高效的有机电致发光器件(OLED)。将涂有ITO的玻璃薄片浸泡到不同浓度的KMnO4溶液中,并对玻璃薄片进行不同时间的超声处理,结果发现,随着KMnO4浓度和超声时间的不同,器件的性能都有不同程度的变化。经过优化发现,当KMnO4浓度为0.005wt%超声时间为15min时,器件的亮度提高1倍多,开启电压也有明显降低,器件的效率提高了近51%。通过原子力显微镜(AFM)对ITO表面进行了对比分析发现,经过KMnO4溶液处理后的器件表面粗糙度降低了;同时,KMnO4溶液的强氧化性提高了样片的表面活性,从而使器件的性能得以提高。

【Abstract】 Highly efficient organic light-emitting diodes(OLEDs)were introduced through indium tin oxide(ITO) anode treated by KMnO4 solution.We immersed the ITO-coated glass substrate into KMnO4 solution with different concentrations and ultrasonic time.to improve the performances of the proposed devices.The maximum luminance was advanced in the OLED whose ITO anode had been treated by ultrasonic in KMnO4 solution with concentration of 0.005 Wt% for 15 minutes.Compared with traditional OLEDs,we found that the proposed device had many advantages,such as a lower turn-on voltage,a higher luminance,and an improved efficiency increased by about 40%.To investigate the working mechanism,we analyzed the ITO-coated glass substrate surface with or without KMnO4 solution treatment.The AFM images of ITO surface after the treatment were much smoother than that without treatment,which indicated that the adhesion between ITO and HTL was increased.At the same time,the surface activation of ITO was improved due to the strong oxygenation of KMnO4.Therefore,the injection of holes was enhanced and the performances of OLEDs were improved.

【基金】 国家自然科学基金资助项目(60668016);国家“863”计划资助项目(2007A12Z112);哈尔滨工业大学(威海)研究基金资助项目(H1TCWHY200802);四平科技局计划资助项目(四科合字第20030017号)
  • 【文献出处】 光电子.激光 ,Journal of Optoelectronics.Laser , 编辑部邮箱 ,2009年03期
  • 【分类号】TN383.1
  • 【被引频次】2
  • 【下载频次】176
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