【摘要】 利用直流磁控溅射技术在BK-7基片上沉积掺锡氧化铟(ITO)透明导电薄膜.研究不同基片温度和氧气流量对薄膜的结构、电学和光学性质的影响,分析光电学性质改变的机理.结果表明,随着氧气流量的增加,载流子浓度(N)不断下降,电阻率(ρ)不断增大,但迁移率(μ)先增大后减小,在氧气流量为0.5cm3/min(1Pa)时有最大值.随着基片温度的上升,N逐渐增加,ρ不断降低,而μ则先增加后减小,在基片温度为200℃时为极大值.所有样品在可见光区的平均光学透过率都大于80%,薄膜的折射率和消光系数从拟合透射光谱数据获得;在1 500 nm光学波长处,折射率随载流子浓度的增加而减小,较好符合线性关系;消光系数随载流子浓度的增大而增加,不符合线性关系.更多还原

【Abstract】 In2O3:Sn(ITO) films were deposited on BK-7 galss substrates by DC magnetron sputtering technique.Effects of oxygen flow rate(FO2) and substrate temperature(Ts) on the electrical and optical properties of the films were investigated.It is found that the carrier concentration(N) monotonously decreases and resistivity(ρ) increases as FO2 increases from 0.0 to 2.0 cm3/min(1Pa).Hall mobility (μ) has the maximum at 0.5 cm3/min(1Pa) FO2.N increases,and ρ decreases as Ts increases from 100 ℃ to 450 ℃.μ has the maximum at 200 ℃ substrate temperature.The average transmittance in visible spectral region for all samples is larger than 80%.Optical constants and film thicknesses were obtained from all normal incidence transmittance data.Refractive index increases and extinction coefficient decreases as FO2 increases.Extinction coefficient increases and refractive index decreases as the increase of substrate temperature.Moreover,the relationship between optical constants and carrier concentration has been discussed.At 1 500 nm optical wavelength,it is found that refractive index and N have a linear relationship.However,extinction coefficient and N have a nonlinear relationship.更多还原