【摘要】 利用射频磁控溅射在石英衬底上生长出铟磷共掺氧化锌薄膜(ZnO:In,P),所用靶材为掺杂五氧化二磷(P2O5)和氧化铟(In2O3)的氧化锌(ZnO)陶瓷靶,掺杂质量分数分别为1.5%和0.3%,溅射气体为Ar和O2的混合气体。原生ZnO薄膜是绝缘的, 600℃退火5 min后导电类型为n型,而800℃退火5 min后为p型。p型ZnO薄膜的电阻率、载流子浓度和霍尔迁移率分别为12.4Ω.cm, 1.6×1017cm-3和3.29 cm2.V-1.s-1。X射线衍射测量结果表明所有样品都只有(002)衍射峰,并与相同条件下生长的未掺杂ZnO相比向大角度方向偏移,意味着In和P都占据Zn位。XPS测试结果表明在共掺ZnO薄膜中P不是取代O而是取代Zn。因此,铟磷共掺ZnO薄膜中,In和P都取代Zn,并且PZn与2个锌空位(VZn)形成PZn-2VZn复合受主,薄膜表现为p型。更多还原

【Abstract】 In,P codoped ZnO [ZnO:(In,P)] films were grown on quartz by radio frequency magnetron sputtering,the ZnO target was mixed with 1.5% P2O5 and 0.3% In2O3,and the mixing gas of Ar and O2 was used as the sputtering gas.The as-grown ZnO:(In,P) film shows insulating conduction,but n-type conductivity after annealing at 600 ℃ for 5 min,and p-type conduction after annealing at 800 ℃ for 5 min.The p-type ZnO:(In,P) has a resistivity of 12.4 Ω·cm,a carrier concentrativity of 1.6×1017 cm-3 and a Hall mobility of 3.29 cm2·V-1·s-1.XRD mea-surement indicates that both the as-grown and annealed ZnO:(In,P) films have a preferred(002) orientation and larger(002) diffraction angles than that of undoped ZnO prepared at the same conditions,implying that both In and P occupy Zn site in the ZnO:(In,P).The XPS result confirm that the P substitutes Zn site(PZn) but not O site in the ZnO:(In,P).Therefore,it was suggested that both In and P substitute at Zn sites in the ZnO:(In,P) and the PZn combines with two Zn vacancies(VZn) to form a PZn-2VZn acceptor complex,which is responsible to p-type conductivity of the ZnO:(In,P).更多还原