【摘要】 采用0.35μm工艺设计制造了新型UMOS功率器件,芯片集成了数千个UMOS沟槽并使之并联,以获得高的击穿电压和大的工作电流.研究发现,沟槽深度对器件的工艺参数及其导通电阻、漏电流、阈值电压、击穿电压等电学性能都有影响,且最终影响量产中的良率.实验表明,在相同的工艺条件下,沟槽深度为1.65μm(试验范围为1.60~1.95μm)时,Φ200 mm晶片的良率可达98%以上,器件导通电阻约8.2 mΩ,源漏击穿电压稳定在34 V以上,正常工作电流可达5 A,开启电压和漏电流也稳定在要求范围内.更多还原

【Abstract】 A new UMOS chip is designed and fabricated with a standard 0.35μm process,consisting of thousands of trenches connected in parallel in order to obtain breakdown voltage and working current as high as possible.In mass production,trench depth will influence process and electrical properties such as on-resistance,leakage current,threshold voltage and breakdown voltage,all of these will influence the final yield.As trench depth is 1.65μm(testing range from 1.60μm to 1.95μm),the yield of Φ 200mm wafer can reach 98% and even more,the on-resistance is very low(around 7.7mΩ),the breakdown voltage between source and drain is high and will be stable above 34V,and the normal working current is as high as 5A.The threshold voltage and the leakage current will also be stable as required.更多还原