【摘要】 用磁控溅射工艺在Si基片上沉积500 nm厚Cu膜,并在不同温度下进行快速退火处理。用扫描电镜(SEM)与原子力显微镜(AFM)观察薄膜表面形貌,并根据分形理论予以定量表征。结果表明:当退火温度T在小于673 K范围内增加时,分形维数Df逐渐减小;而当T增加至773 K时,Df异常增加。本文根据表面扩散、晶粒长大、缺陷形成等机制对其进行了分析。更多还原

【Abstract】 500 nm-thick Cu thin films were deposited on Si substrates by magnetron sputtering technology and then annealed under different temperatures T.Film surface morphologies were investigated using scanning electron microscope(SEM) and atomic force microscope(AFM).The results show that,with increasing T in the range of <673 K,the fractal dimension D_f of film surface decreases gradually. For the film annealed at T=773 K,D_f increases abruptly.The film surface morphology was analyzed based on surface diffusion,grain growth,and defect development.更多还原