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硅悬臂梁的制造及压阻特性研究
Fabrication and Characterization Research of Piezoresistive Cantilever Beam
【摘要】 简述了硅压阻悬臂梁的工艺流程,在力学参数的测试中,利用原子力显微镜,测得杨氏模量约为133GPa;在力电耦合特性的测试中,原子力显微镜探针对悬臂梁自由端步进下压,利用半导体参数测试仪,测得悬臂梁的位移灵敏度为1.95×10-7-1,力灵敏度为4.22×10-6nN-1。另一方面,与Coventorware模拟结果相比,灵敏度实验值大约是模拟值的1.4倍,与理论值近似,说明当硅悬臂梁厚度进入纳米尺寸后,量子效应和表面效应明显,压阻效应增强。
【Abstract】 The fabrication process of piezoresistive cantilever is presented.Using the AFM,the Young’s modulus is obtained as about 133GPa;with the method of pressing cantilever beam tip by AFM tip,we know that displacement sensitivity and force sensitivity is 1.95×10-7-1,4.22×10-6nN-1respectively through the measuse of semiconductor characterization instrument.The experimental results show that doping concentration affects Young’s modulus of silicon greatly.On the other hand,comparing with simulation results of Coventorware,sensitivity from the experimental results is 1.4 times more than simulation,which is the same as on theory,and the expesimental sensitivity makes clear that when cantilever beam’s width is scaled down to nanometers,quantum effect and surface effect become obvious,moreover,piezoresistive effect becomes more evident.
【Key words】 cantilever beam; piezoresistive effect; young modulus; sensitivity;
- 【文献出处】 电子器件 ,Chinese Journal of Electron Devices , 编辑部邮箱 ,2009年06期
- 【分类号】TP205
- 【被引频次】4
- 【下载频次】206