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3~10GHz SiGe HBTs超宽带低噪声放大器的设计
Design of a 3~10 GHz Ultra-Wideband Low Noise Amplifier Based on SiGe HBTs
【摘要】 根据UWB(Ultra-wideband)无线通信标准,提出了一款超宽带低噪声放大器并进行了设计。该放大器选用高性能的SiGe HBTs,同时采用并联和串联多重反馈的两级结构,以达到超宽频带、高增益、低噪声系数以及良好的输入输出匹配的目的。仿真结果表明,放大器在3-10 GHz带宽内,增益S21高达21 dB,增益平坦度小于1.5 dB,噪声系数在2.4~3.3 dB之间,输入输出反射系数(S11和S22)均小于-9 dB,并且在整个频带内无条件稳定。所有结果表明该LNA性能良好。
【Abstract】 Based on the standard of UWB(Ultra-wideband) wireless communication,an ultra-wideband low noise amplifier(LNA) is proposed and designed.In this LNA,high performance SiGe HBTs are chosen,two stages structure with multiple shunt and series feedback loops are adopted to achieve ultra-wideband,high gain,low noise figure,and good input and output impedance match.The simulation results show the LNA has gain of 21 dB with 1.5 dB variation,noise figure varies between 2.4 to 3.3 dB,and input and output reflections(S11 and S22) are both less than-9 dB over 3 to 10 GHz.Meanwhile,the LNA is unconditionally stable in the whole band.All the results exhibit the LNA has good performance.
【Key words】 RF amplifier; low noise amplifier; circuit design; ultra-wideband; SiGe HBTs;
- 【文献出处】 电子器件 ,Chinese Journal of Electron Devices , 编辑部邮箱 ,2009年02期
- 【分类号】TN722.3
- 【被引频次】4
- 【下载频次】261