【摘要】 基于HBT特殊的物理机理及结构,将适用于BJT的GP大信号模型用于InP基HBT的研究中。通过构建误差函数,采取解析法提取了该模型中的13项SPICE直流参数,并设计了参数提取实验装置,最后将研究结果用于发射极为2μm×19μm的InP/InGaAs HBT建模中。通过对比模型仿真和器件实测的数据可以看出,本文采用的HBT GP模型准确度高,可以较好地表征实际HBT器件的直流特性。更多还原

【Abstract】 Considering the special physical theory and structure,we used GP large signal model for InP-based HBT(GP model was used for BJT previously).By constructing error function,we extracted 13 SPICE DC parameter in this model with analytic method and designed the Parameter-extraction measurement devices,finally the InP/InGaAs HBT of 2 μm×19 μm emitter size was modeled based on the above results.By comparison between simulated results of the extracted model and measured data,the model has a good agreement with DC characteristics of fabricated HBT.更多还原