【摘要】 文中设计了一个虚拟栅结构的VDMOS,该结构可以减小漏栅反馈电容Crss,使其接近于零。因此,对于相同的模块电压率,虚拟栅结构可以使MOS器件有一个更短的沟道,同时也因为有一个更大的栅漏交叠区域而使导通电阻减小。这样,器件跨导也可以提高。经过ISE仿真模拟,虚拟栅结构比原始分栅结构的击穿电压提高了近42%,而电流输出特性也更好更稳定。更多还原

【Abstract】 The structure of VDMOS with a dummy-gate is designed.The dummy-gate functions as a field plate to minimize the drain-to-gate feedback capacitance Crss,which approximates zero.Hence,for the same blocking voltage rating,the dummy-gate structure allows the MOSFET to have a shorter channel and a larger gate to drain the overlap area to minimize the on-state resistance.And the transconductance gain can be improved.Simulation of ISE shows that the breakdown voltage of the dummy-gate is increased by approximately 42%,and the characteristic of the electric current is more stable.更多还原