【摘要】 采用两步烧结法制备了Y3+掺杂的(以Y(NO3)3·6H2O形式加入)ZnO压敏陶瓷,通过XRD、SEM和EDX系统研究了Y3+掺杂量对ZnO压敏陶瓷微结构和电性能的影响。结果表明:随着Y3+掺杂量的增加,电位梯度VT和非线性系数α提高,晶粒尺寸减小,施主浓度Nd和晶界态密度Ns降低,势垒宽度ω增大。当掺杂的x[Y(NO3)3·6H2O]为1.2%、烧结温度为1100℃时,ZnO压敏陶瓷电性能最好,其VT为675V/mm,α为63.9,漏电流IL为2.40μA。更多还原

【Abstract】 Y(NO3)3·6H2O-doped ZnO varistor ceramics were prepared by two-step sintering method. The effects of Y(NO3)3·6H2O-doped amount on the microstructure and electric properties of ZnO varistor ceramics were systematically studied by XRD, SEM and EDX. The results show that with increasing Y(NO3)3·6H2O-doped amount, voltage gradient(VT) and nonlinear coefficient (α) increase, grain size decreases, the donor number density (Nd) and density of grain boundary states (Ns) decrease, whereas barrier width(ω) increases. When x[Y(NO3)3·6H2O] and sintering temperature are 1.2% and 1 100 ℃, respectively, obtained ZnO varistor ceramics have best electric properties: voltage gradient of 675 V/mm, nonlinear coefficient of 63.9, and leakage current of 2.40 μA.更多还原