【摘要】 采用乙醇为溶剂,通过恒电流的方法电沉积制备了CuInSe2薄膜材料,研究了制备工艺条件对材料组成、结构与性能的影响,研究结果表明:最佳的沉积电流为-2mA(vs.SCE),且电流密度的增加有利于电位较负元素的沉积;沉积膜中元素的原子比与电解液中的浓度比变化一致;硒化退火是获得高质量黄铜矿结构CuInSe2薄膜的必要过程,随着退火温度的升高和退火时间的延长,CuInSe2薄膜退火后结晶程度变好,颗粒变大,致密性也有所改善。更多还原

【Abstract】 CuInSe2 precursor films were prepared by constant current cathodic electrodeposition in alcohol solution, and the preparation conditions and their effect on performance of CuInSe2 films were investigated.The results show that the optimum current for electrodeposition is about-2 mA(vs.SCE), and the increase of current density is propitious to the deposition of In;the ratio of deposition atoms is consistent with the electrolyte concentration;annealing is a necessary step for getting high-quality CuInSe2thin films, the crystallization and density improve, and the grains grow bulkier as the annealing temperature and time is prolonged.更多还原