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沉积温度对YBCO薄膜取向的影响
INFLUENCE OF SUBSTRARTE TEMPERATURE ON EPITAXIAL GROWTH OF YBCO FILM
【摘要】 采用脉冲激光沉积技术(PLD)在SrTiO3(100)单晶衬底上制备YBCO薄膜,用X射线对薄膜的取向和织构进行表征,用扫描电子显微镜(SEM)对薄膜的表面形貌进行观察.实验主要研究了衬底温度对薄膜外延取向的影响,结果表明在770℃温度下制备的YBCO有较多的a轴晶粒生成,在800℃温度下制备的YBCO是纯的c轴取向,且平均面内φ扫描半高宽(FWHM)为1.2°,超导转变宽度(△Tc)为0.9K.
【Abstract】 The YBCO superconducting layers were deposited by pulsed laser deposition ( PLD) technique on SrTiO3(100)substrates. X-ray diffraction was employed to characterize the in-plane alignment and cube texture. The surface morphology was evaluated in SEM. We studied the effect of substrate temperature on epitaxial growth of YBCO. The results showed that the a-axis oriented grains grow at lower temperature(770℃),predominantly c-axis film with FWHM value of 1.2° and transition width △Tc of 0.9K is obtained at higher temperature(800℃).
- 【文献出处】 低温物理学报 ,Chinese Journal of Low Temperature Physics , 编辑部邮箱 ,2009年03期
- 【分类号】O484
- 【被引频次】2
- 【下载频次】198