Preparation of ZnO Thin Films on Free-Standing Diamond Substrates

【摘要】 <正> Highly c-axis-oriented ZnO films were deposited successfully on the nucleation sidesof free-standing diamond （FD） films by the direct current （DC） magnetron sputtering method. Theeffect of the sputtering parameters, such as power, gas pressure and sputtering plasma compositionof Ar-to-O₂, on the properties of ZnO thin films was investigated in detail. X-ray diffraction （XRD）measurements showed that, at a sputtering power of 200 W, gas pressure of 0.5 Pa and an Ar-to-O₂ composition of 1:1, a higher intensity of the （002） diffraction peak and a narrower full widthat half maximum （FWHM） were detected which meant high c-axis orientation and high qualityof the ZnO films. To improve the quality of the ZnO film, a thin ZnO layer was pre-grown as ahomo-buffer layer. XRD measurements showed that this buffer layer had a beneficial effect on thestructural and morphological properties of the post-grown ZnO film.更多还原

【Abstract】 Highly c-axis-oriented ZnO films were deposited successfully on the nucleation sides of free-standing diamond （FD） films by the direct current （DC） magnetron sputtering method. The effect of the sputtering parameters, such as power, gas pressure and sputtering plasma composition of Ar-to-O₂, on the properties of ZnO thin films was investigated in detail. X-ray diffraction （XRD） measurements showed that, at a sputtering power of 200 W, gas pressure of 0.5 Pa and an Ar-to- O₂ composition of 1:1, a higher intensity of the （002） diffraction peak and a narrower full width at half maximum （FWHM） were detected which meant high c-axis orientation and high quality of the ZnO films. To improve the quality of the ZnO film, a thin ZnO layer was pre-grown as a homo-buffer layer. XRD measurements showed that this buffer layer had a beneficial effect on the structural and morphological properties of the post-grown ZnO film.更多还原